This system uses high-temperature discharge to ionize gas into plasma, enabling efficient reaction and film deposition. It supports the preparation of multiple high-performance thin films, including silicon carbide, silicon nitride, silicon oxynitride, and aluminum oxide. Engineered for advanced photovoltaic manufacturing, it is ideal for a wide range of cell technologies such as PERC, PERT, TOPCon, and BC, ensuring excellent surface passivation, superior film quality, and improved overall cell efficiency.